多型態樣品製備服務:FIB定點TEM樣品製備技術
技術說明
奈米薄膜樣品之TEM試片製備技術:藉由DBFIB製備TEM試片,將試片薄區厚度控制於70nm以下,得到理想的高解析影像,提供樣品膜層厚度之量測分析服務。
微米纖維之TEM試片製備技術:為分析5~20um直徑碳纖維之微結構,利用DBFIB製備TEM試片,並選擇單一纖維製備縱向(與纖維長軸垂直的截面)及橫向(與纖維長軸平行的截面)試片,應用於分析纖維微結構及方向性。
機台簡介
FEI Nova 200
- Accelerating Voltage:
- Electrons : 0.2 ~ 30 KV
- Ions : Up to 30 KV
- Electron Filament:
- Schottky field emitter
- SEM Resolution:
- 3.5 nm @ 30 KV at high vacuum
- 3.5 nm @ 30 KV in ESEM mode
- <15 nm @ 3 KV in low vacuum mode
- Ion Resolution:
- 7 nm @ 30 KV @ 1pA
- Specimen stage:
- 5-axis motorized stage, 50 x 50 mm
- TEM sample preparation:
- Avaliable area → 10μm(L) x 5μm(W)
- Final sample thickness: → < 80 nm (@target)
- Position error: →less than 30 nm.
- Electrical probing:
- Probing geometry →2- or 4-probe probing
- Sample size:
2-probe: > 1 μm (L)
4-probe: > 5μm (L) - Probing error: → less than 50 nm